| 摘要 |
PROBLEM TO BE SOLVED: To simply monitor piping defects occurring between contacts with an electronic beam type pattern defect inspection device. SOLUTION: A TEG for detecting piping defects of a semiconductor device is used for detecting the piping defects between the contacts 15 formed to active regions adjacent to each other of the semiconductor device. The TEG is provided with: a plurality of element isolation films 11 formed on the surface of a semiconductor substrate in parallel by the STI; a plurality of gate wirings 13 formed at prescribed intervals, and in parallel at a prescribed angle to each element isolation film 11; an interlayer insulating film formed so as to cover the gate wirings 13 on the surface of the semiconductor substrate; and the contacts 14, 15 respectively formed at each of active region forming positions, which exists between the element isolation films 11 adjacent to each other, between the gate wirings 13 adjacent to each other so as to reach the same depth as the surface of the semiconductor substrate while penetrating the interlayer insulating film. COPYRIGHT: (C)2007,JPO&INPIT
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