| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of obtaining a desired 4H silicon carbide single crystal by controlling the transformation of crystal polymorph. SOLUTION: The manufacturing method of a silicon carbide single crystal is to subject a silicon carbide single crystal to vapor phase epitaxy by bringing Si containing stock gas and C containing stock gas to reaction on a seed crystal substrate. In the method, the seed crystal is a 15R silicon carbide single crystal, and the 4H silicon carbide single crystal is subjected to vapor phase epitaxy by bringing the Si containing stock gas and the C containing stock gas to reaction at a temperature of 1,700°C or higher with a C/Si ratio of 1.0 or less. COPYRIGHT: (C)2007,JPO&INPIT
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