| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method by which a change in in-plane distribution of a Pb amount can be prevented, and also to provide a manufacturing method of a semiconductor device. SOLUTION: In this film formation method, magnetron sputtering equipment is used. The magnetron sputtering equipment comprises a chamber 101, a sputter target 104 containing lead which is installed inside the chamber 101, and a magnet unit 106 which is rotatably installed outside the chamber 101 and temporally changes a magnetic field on the surface 104a of the sputter target 104. Each time the formation of a film containing lead is finished on the predetermined number of silicon substrates 10 by magnetron sputtering method, a distance D between the surfaces of the sputter target 104 and magnet unit 106 is returned to the optimal one. COPYRIGHT: (C)2007,JPO&INPIT
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