发明名称 |
Method for forming a high density dielectric film by chemical vapor deposition |
摘要 |
A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate, wherein the first gas comprises silicon-containing or carbon-containing gas; (c) the first gas is stopped, and the first pressure is lowered to a second pressure; (d) a second gas is introduced into the processing chamber with a third pressure, and forced to react with the first gas absorbed on the substrate and remained in the processing chamber, wherein the second gas comprises oxidizer or reduction agent; (e) the steps (b)~(d) are repeated until a high density dielectric film is formed on the substrate.
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申请公布号 |
US2007020953(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
US20050186353 |
申请日期 |
2005.07.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSAI CHENG-YUAN;LIN CHIH-LUNG;CHOU YOU-HUA |
分类号 |
H01L21/31;C23C8/00;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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地址 |
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