| 摘要 |
A CMOS image sensor cell includes a first pixel area in which at least one first photodiode is disposed for generating a first sense signal in response to a photo-signal of a first color; a second pixel area neighboring the first pixel area, in which at least one second photodiode is disposed for generating a second sense signal in response to a photo-signal of a second color; and a third pixel area neighboring the first and second pixel areas, in which at least one third photodiode is disposed for generating a third sense signal in response to a photo-signal of a third color. A sense amplifier is disposed substantially within the first, second and third pixel areas for amplifying the first, second and third sense signals. The first, second and third pixel areas that substantially occupy an entire area of the image sensor cell are substantially equal in size.
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