发明名称 |
Vertical GaN-based LED and method of manufacturing the same |
摘要 |
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
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申请公布号 |
US2007018177(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
US20060490231 |
申请日期 |
2006.07.21 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE JAE H.;CHOI HEE S.;OH JEONG T.;LEE SU Y. |
分类号 |
H01L33/12;H01L33/16;H01L33/32;H01L33/38 |
主分类号 |
H01L33/12 |
代理机构 |
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地址 |
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