发明名称 |
PLASMA PROCESSING APPARATUS AND EXHAUSTING PLATE |
摘要 |
A plasma processing apparatus and an exhausting plate are provided to improve semiconductor manufacturing yield by stably containing plasma between upper and lower electrodes. A porous exhausting plate is arranged inside a chamber and ventilates exhaust gas. The porous exhausting plate includes a horizontal unit(154), a slant unit(156), and plural exhausting holes. The horizontal unit is formed with a plate shape and includes an aperture at a center thereof. The slant unit is inwardly or outwardly elongated from an inner or outer periphery of the horizontal unit and slanted from the inner or outer periphery of the horizontal unit by a predetermined slant angle. The porous exhausting plate includes plural horizontal members and plural slant members. The horizontal members are arranged to be separated from the horizontal unit in a radial formation. The exhausting holes couple adjacent horizontal members.
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申请公布号 |
KR20070012131(A) |
申请公布日期 |
2007.01.25 |
申请号 |
KR20050067002 |
申请日期 |
2005.07.22 |
申请人 |
RADIION TECH CO., LTD. |
发明人 |
CHUNG, SANG GON;KIM, HYOUNG WON;LEE, KYUNG HO |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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