METHOD OF MANUFACTURING MULTI-LEVEL THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES BY USING THE SAME

摘要

A method for forming a multilayered thin film using plasma treatment is provided to form a carbon-based thin film on a metal layer or a metal nitride layer such that the carbon-based thin film has excellent interlayer adhesion and doesn't have unevenness by improving a surface characteristic of an underlying layer while using nitrogen-containing gas. A metal layer(30) or a metal nitride layer is deposited on a semiconductor substrate(10). A plasma treatment is performed on the surface of the metal layer or the metal nitride layer by using nitrogen-containing gas. A carbon-based thin film is deposited on the metal layer or the metal nitride layer. The metal layer is selected from a group of Al, Ti and Ta. The metal nitride layer is selected from a group of TiN and TaN.