发明名称 Protection layer for preventing laser damage on semiconductor devices
摘要 A semiconductor structure prevents energy that is used to blow a fuse from causing damage. The semiconductor structure includes a device, guard ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. The seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.
申请公布号 US2007018279(A1) 申请公布日期 2007.01.25
申请号 US20050186581 申请日期 2005.07.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. 发明人 LIN JIAN-HONG;LIN KANG-CHENG;LEE TZU-LI
分类号 H01L29/00 主分类号 H01L29/00
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