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发明名称
VERBESSERTES LÜCKENFÜLLUNGSVERFAHREN FÜR HALBLEITERSTRUKTUR UNTER VERWENDUNG VON DOTIERTEM SILIKATGLAS MIT MEHRSTUFIGER ABSCHEIDUNG/AUSHEILBEHANDLUNG
摘要
申请公布号
DE69834933(T2)
申请公布日期
2007.01.25
申请号
DE19986034933T
申请日期
1998.09.30
申请人
INFINEON TECHNOLOGIES AG
发明人
KIRCHHOFF, MARKUS;ILG, MATTHIAS
分类号
H01L21/768;H01L21/3105
主分类号
H01L21/768
代理机构
代理人
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地址
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