发明名称 |
Semiconductor laser diode assembly |
摘要 |
Provided is a semiconductor laser diode. The semiconductor laser diode (100a) includes a first material layer (120), an active layer (130), and a second material layer (140), characterized in that the semiconductor laser diode includes: a ridge waveguide (200), which is formed in a ridge shape over the second material layer (140) to define a channel (180) defined so that a top material layer (143) of the second material layer (140) is limitedly exposed, and in which a second electrode layer (170) which is in contact with the top material layer (143) of the second material layer (140) via the channel (180) is formed; and a first protrusion (210), which is positioned at one side of the ridge waveguide (200) and has not less height than that of the ridge waveguide (200). <IMAGE> |
申请公布号 |
EP1469569(B1) |
申请公布日期 |
2007.01.24 |
申请号 |
EP20030258213 |
申请日期 |
2003.12.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK, JOON-SEOP;CHAE, SU-HEE |
分类号 |
H01S5/022;H01S5/22;H01S3/0941;H01S5/00;H01S5/042;H01S5/323 |
主分类号 |
H01S5/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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