| 摘要 |
<p>A pinned photodiode that includes a raised silicon epitaxial layer that serves as a passivating layer. This allows the N - region to be near the surface of the silicon substrate, which enhances linkage to the transfer gate. The photodiode comprises an N - region formed within a P-type region of a semiconductor substrate having a top surface. An epitaxial silicon layer is formed on the top surface of said semiconductor substrate.</p> |
