SHALLOW TENCH ISOLATION PROCESS AND STRUCTURE

摘要

A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The strained material (36) is formed after the trench (34) is formed. The process can be utilized on a compound semiconductor layer (15) above a buried oxide (Box) layer (14). ® KIPO & WIPO 2007