AN IMPROVED METHOD FOR FABRICATING AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE MADE,申请号EP20050728610-传众专利搜索

发明名称	AN IMPROVED METHOD FOR FABRICATING AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE MADE
摘要
申请公布号	EP1745504(A1)	申请公布日期	2007.01.24
申请号	EP20050728610	申请日期	2005.03.23
申请人	US	发明人	US;US;US;US;US;US;US
分类号	H01L21/312;C23C16/40;H01L21/316	主分类号	H01L21/312
代理机构		代理人
主权项
地址