ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY(EEPROM) AND METHOD OF FABRICATING THE SAME

摘要

An EEPROM(Electrically Erasable Programmable Read Only Memory) and a method of manufacturing the same are provided to prevent dopants from penetrating into an outer active region and to increase a cell coupling ratio of the EEPROM by varying the distance between an opening portion and an active region according to the width of an isolation pattern. An isolation pattern(110) for defining active regions(IACT,OACT) is formed on a semiconductor substrate, wherein the substrate includes a memory transistor region and a select transistor region. A gate insulating layer with a tunnel region is formed on the active regions. A first conductive layer is formed thereon. Opening portions for exposing the isolation pattern to the outside are formed on the resultant structure by patterning selectively the first conductive layer. The distance between the opening portion and the active region is capable of being varied according to the width of the isolation pattern.