| 摘要 |
<p>A nonvolatile memory device and a manufacturing method thereof are provided to improve the reliability of the memory device itself by acquiring a low resistive source line. An isolation layer for defining an active region is formed on a semiconductor substrate. A word line for crossing over the active region is formed thereon. First ions are implanted into the active region adjacent to one side of the word line. The substrate is partially exposed to the outside by removing the isolation layer from one side of the word line. Second ions are implanted into the exposed portion of the substrate and the active region in order to form a source line(18), a source region(16) and a connection region(17) for connecting the source line with the source region.</p> |
