发明名称 |
METHOD FOR FORMING PHOTORESIST PATTERN |
摘要 |
Provided is a method for forming a photoresist pattern which has excellent adhesion so as to ensure high perpendicular and horizontal ratio on various kinds of substrate. The method for forming a photoresist pattern comprises the steps of: forming a photocatalyst film on a substrate(S10); forming a photoresist film of negative type on the photocatalyst film(S20); exposing the photoresist film to an ultraviolet lay(S30); heat-treating the photoresist film(S40); and developing the photoresist film(S50) to form a photoresist pattern. In the method, the photocatalyst film is formed from at least one material selected from the group consisting of TiO2, ZnO, SnO2, SrTiO3, WO3, B2O3 and Fe2O3.
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申请公布号 |
KR100676520(B1) |
申请公布日期 |
2007.01.24 |
申请号 |
KR20050100326 |
申请日期 |
2005.10.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, KYU YOUN;PARK, CHIN SUNG |
分类号 |
G03F7/00;G03F7/085;G03F7/09 |
主分类号 |
G03F7/00 |
代理机构 |
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