发明名称 METHOD FOR FORMING PHOTORESIST PATTERN
摘要 Provided is a method for forming a photoresist pattern which has excellent adhesion so as to ensure high perpendicular and horizontal ratio on various kinds of substrate. The method for forming a photoresist pattern comprises the steps of: forming a photocatalyst film on a substrate(S10); forming a photoresist film of negative type on the photocatalyst film(S20); exposing the photoresist film to an ultraviolet lay(S30); heat-treating the photoresist film(S40); and developing the photoresist film(S50) to form a photoresist pattern. In the method, the photocatalyst film is formed from at least one material selected from the group consisting of TiO2, ZnO, SnO2, SrTiO3, WO3, B2O3 and Fe2O3.
申请公布号 KR100676520(B1) 申请公布日期 2007.01.24
申请号 KR20050100326 申请日期 2005.10.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, KYU YOUN;PARK, CHIN SUNG
分类号 G03F7/00;G03F7/085;G03F7/09 主分类号 G03F7/00
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