PROGRAM METHOD OF FLASH MEMORY CAPABLE OF COMPENSATING REDUCTION OF READ MARGIN BETWEEN STATES DUE TO HOT TEMPERATURE STRESS

摘要

A program method of a flash memory for compensating the reduction of a read margin due to high temperature stress is provided to obtain a threshold voltage equal to or higher than a verification voltage of a first program by sequentially performing first and second programming processes. A first programming process is performed to program a plurality of memory cells connected to a selected row and first or second bit lines by multi-bit data(S400). A second programming process is performed to re-program the programmed memory cells connected to the row positioned below the selected row and the first or second bit lines so that a read margin between adjacent states, which is reduced due to high temperature stress, is increased(S420).