| 摘要 |
Binary compounds are produced by chemical reaction between the vapour of one constituent element or compound of such element and a melt of the other element or compound contained in a crucible and at a temperature below the melting-point of the binary compound, the solid reaction product formed on the surface of the melt and unreacted molten reactant being drawn upwards by means of one or more solid bodies consisting of the binary compound or an inert material, the product is melted, unreacted molten reactant is reacted with the vaporous reactant and the whole is allowed to solidify, a temperature gradient being maintained within the molten reactant in the crucible, the surface of the melt having the highest temperature. The vaporous reactant may be an element of Group V, VI or VII of the Periodic Table or its inorganic and/or organic compounds or an arsenide or AsH3, and the molten reactant may be an element, alloy, inorganic or organic compound, intermetallic compound or solid solution. The binary compound produced may be a nitride, arsenide, e.g. of gallium, oxide, sulphide, e.g. of zirconium, selenide, telluride, halide, phosphide, antimonide, boride, carbide, e.g. of silicon, silicide, germanide or slannide or a compound formed from elements of Group I and VII, or II and VI, or III and V of the Periodic Table. An illustrated example (drawing not shown) describes the preparation of indium phosphide.ALSO:Binary compounds are produced by chemical reaction between the vapour of one constituent element or compound of such element and a melt of the other element or compound contained in a crucible and at a temperature below the melting point of the binary compound, the solid reaction product formed on the surface of the melt and unreacted molten reactant being drawn upwards by means of one or more solid bodies consisting of the binary compound or an inert material, the product is melted, unreacted molten reactant is reacted with the vaporous reactant and the whole is allowed to solidify, a temperature gradient being maintained within the molten reactant in the crucible, the surface of the melt having the highest temperature. The vaporous reactant may be an element p of Group V, VI or VII of the Periodic Table or its inorganic and/or organic compounds or an arsenide or AsH3, and the molten reactant may be an element, alloy, inorganic or organic compound, inter-metallic compound or solid solution. The binary compound produced may be a nitride, arsenide (e.g. of gallium), oxide, sulphide (e.g. of zirconium), selenide, telluride or halide. The phosphide, antimonide, boride, carbide (e.g. of silicon), silicide, germanide or stannide or a compound formed from elements of Group I and VII, or II and VI, or III and V of the Periodic Table. An illustrated example (drawing not shown) describes the preparation of indium phosphide.
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