SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor memory device is provided to blow a residual metal pattern positioned on a conductive pattern when a conductive pattern explodes thermally by forming a conductive pattern under a fuse such that the conductive pattern absorbs energy of a laser beam to explode thermally. An insulation layer is formed on a substrate in a fuse region. A fuse(220c) is positioned on the insulation layer, having a stack structure composed of a conductive pattern(212a,212c) and a metal pattern(216a,216c). The conductive pattern can be a polysilicon pattern. The conductive pattern is made of a material which absorbs energy of a laser beam to explode thermally. The metal pattern is stacked on the conductive pattern. The insulation layer can be formed on a capacitor positioned in a cell array region.