| 摘要 |
A method for cleaning a process chamber in semiconductor device manufacturing equipment is provided to prevent the damage of a wafer by improving a cleaning effect on the polymers attached on a dome of the process chamber using an improved cleaning gas containing C, H, N or Cl radicals. An etching process is performed on a wafer of a process chamber by using a process gas containing N2 and the wafer is unloaded from the process chamber(S300). A cleaning gas made of NH3 and O2 is injected into the process chamber(S302). The cleaning gas is changed into a plasma state to remove particles from the process chamber(S304).
|
