| 摘要 |
<p>A method of forming a pixel of an image sensor with reduced etching damage is disclosed. The method first includes forming a light sensitive element in a substrate. Then, a transfer gate is formed atop the substrate and adjacent to the light sensitive element. A protective layer, such as an anti-reflective coating, is then formed over the light sensitive element. A blanket oxide layer is formed over the protective layer and the transfer gate. Finally, the oxide layer is etched back to form a sidewall spacer the sidewall of a gate stack. The protective layer protects the surface of the light sensitive element from etching damage.</p> |
