| 摘要 |
<p>A method is disclosed for driving a semiconductor device. To make it possible to control turn-off operation even after switch over to transistor operation after commutation of the main current from a cathode electrode (5) to a gate electrode (6) in turn-off operation, a semiconductor device according to the invention comprises a first electrode (7), a first region (2) of a first conduction type provided on the first electrode (7), a second region (1) of a second conduction type provided on the first region (2), a third region (3a) and a fourth region (3b) of the first conduction type respectively provided on the second region (1) with a predetermined distance from each other to allow the formation of a channel region on the second region (1), a fifth region (4) of the second conduction type provided on the third region (3a), a second electrode (5) provided on the fifth region (4), a gate electrode (6) established in contact with the fourth region (3b) and a control electrode (9) provided on a separate region between the third region (3a) and the fourth region (3b) on the second region (1) to control the channel region through an insulation layer (8).</p> |
