| 摘要 |
PROBLEM TO BE SOLVED: To conduct a good heat dissipation by forming copper layers on both surfaces by an impinging method of a heat sink base to a copper-silicon carbide. SOLUTION: A package for housing a semiconductor element includes the heat sink base 3 having a placing part for placing the semiconductor element 4 on an upper surface, an insulating film 1 mounted on the upper surface of the base 3 and having a wiring layer 8, and a cover 2 mounted on the upper surface of the frame 1. The frame 1 is formed of a glass ceramic sintered material having a specific permittivity of 7 or less. The layer 8 is formed of a metal material having an electric resistivity of 2.5μΩcm or less. The base 3 is formed of a composite material layer 3a formed by impregnating a porous material of the silicon carbide with copper and copper layers 3b formed on upper and lower surfaces of the layer 3a, and satisfies 30μm≤t2≤300μm and t2≤0.15×t1. The reference t1 is a thickness of the layer 3a, and t2 is a thickness of the layer 3b. Thus, the heat of the element 4 can be efficiently dissipated, and the base 3 can be connected to the frame 1 with high reliability. COPYRIGHT: (C)2004,JPO |
