Process for obtaining thin films of zirconium nitride

摘要

In the production of zirconium nitride (ZrN) film (I) by CVD process (chemical vapor deposition) from a reactive gas on a substrate surface, a zirconium tetrakis(dialkylamide) (II) is used as zirconium precursor and a 1-mono- or 1,1-di-alkylhydrazine (III) as reactive gas, both with 1-4 carbon linear or branched alkyl groups. Production of zirconium nitride (ZrN) film (I) by a CVD process (chemical vapor deposition) from a reactive gas on a substrate surface comprises using a zirconium tetrakis(dialkylamide) of formula (II) as zirconium precursor and a 1-mono- or 1,1-di-alkylhydrazine of formula (III) as reactive gas: Zr(NR 1>R 2>) 4 (II) H 2N-NR 3>R 4> (III); R 1>, R 2>, R 3>linear or branched 1-4 C alkyl; R 4>1-4 C alkyl or H. Independent claims are included for the following: (1) (I) produced by this process; (2) use of (I) as gate metal in semiconductor structures, especially in integrated circuits, or as electroconductive film in electronic devices, especially capacitors or integrated circuits; (3) use of (I) for surface hardening of metals, especially for tool surfaces; (4) substrate with (I).