发明名称 PHOTORESIST POLYMER, PHOTORESIST COMPOSITION COMPRISING THE SAME AND METHOD FOR FORMING PHOTORESIST PATTERN USING IT
摘要 <p>A photoresist polymer for preparing photoresist composition and patterning the photoresist is provided to be employed in developing a photoresist film formed of the photoresist composition with use of water, thereby simplifying production processes and saving production cost by comprising polymerization repeating units with specific formula in the photoresist polymer. The photoresist polymer comprises: polymerization repeating unit represented by a formula(1), wherein R1 is linear or branched chain alkylene having carbon atoms of 1 to 10, n is integer ranging from 1 to 10, and mole ratio of a unit to b unit ranges from 5-95 : 95-5. The photoresist polymer has weight average molecular weight ranging from 2,000 to 300,000. The photoresist composition includes the photoresist polymer as well as 0.05 to 10wt. parts of photoacid generator to 100wt. parts of the polymer, alkaline compound and solvent as a mixture of water and alcohol compound. The alkaline compound is selected from amine compound and ammonium compound.</p>
申请公布号 KR20070010838(A) 申请公布日期 2007.01.24
申请号 KR20050065781 申请日期 2005.07.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, GEUN SU
分类号 G03F7/039;G03F7/004 主分类号 G03F7/039
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