| 摘要 |
<p>A capacitor and a method for manufacturing the same are provided to easily form the capacitor of vertical structure without using an additional mask and deposition processing. First conductive lines(41a,41b,41c) are formed on a substrate(40). A first interlayer dielectric(42) including a first via hole on the first conductive line, and adjacent second and third via holes on the substrate is formed on the resultant structure. A first metal film(44a) and a contact plug(45a) are formed in the first via hole. A first and a second capacitor electrode(46a,46b) are formed in the second and the third via holes, thereby forming a capacitor of vertical structure.</p> |
