发明名称 DIFFERENTIAL CIRCUIT, OUTPUT BUFFER CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT USED FOR MULTI-POWER SYSTEM
摘要 A differential circuit, an output buffer circuit and a semiconductor integrated circuit used in a multi-power system are provided to acquire a high speed operation by using an NMOS transistor for a low power voltage as a differential switching transistor of a differential circuit or an output buffer circuit. A differential circuit includes a differential switching circuit(100) having first and second NMOS transistors. Source electrodes of the first and second NMOS transistors are electrically connected to a common source node. The first and second NMOS transistors switch the first and second differential input signals differentially, and output the first and second differential output signals. Each body of the first and second NMOS transistors is biased at a predetermined voltage level, and is maintained so that a voltage difference between each gate electrode of the first and second NMOS transistors and the body is below a low power voltage. The differential switching circuit(100) is used in a multi-power system using a high power voltage and a low power voltage.
申请公布号 KR20070010729(A) 申请公布日期 2007.01.24
申请号 KR20050065557 申请日期 2005.07.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OKAMURA HITOSHI
分类号 H03K19/00;H03K19/0175 主分类号 H03K19/00
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