CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

摘要

A CMOS image sensor and a method for manufacturing the same are provided to prevent dark current by forming an indium-diffusion region on an upper surface of a photodiode. A photodiode region(103) is formed at an active region of a substrate(101). An indium-diffused region(104) is formed on the surface of the photodiode region. An interlayer dielectric(105) is formed on the resultant structure. A color filter layer(106) is formed on the interlayer dielectric corresponding to the photodiode region. A planarization layer(107) is formed on the resultant structure. A micro-lens(108) is formed on the planarization layer corresponding to the color filter.