| 摘要 |
A semiconductor device is provided to prevent the characteristic of a ferroelectric capacitor from being deteriorated by reducing the quantity of water, hydrogen and gas increased when sealing resin is hardened. A plurality of semiconductor devices are arranged to form a semiconductor chip(111) having a memory cell, including a ferroelectric capacitor structure formed by interposing a ferroelectric layer having a ferroelectric characteristic by two electrodes. The semiconductor chip is sealed by using sealing resin(115) having a filler content of 90 weight percent so as to form a thin film package structure whose mounting height is not greater than 1.27 millimeters. The filler can be a spherical filler. |
