发明名称 CORE VOLTAGE THRESHOLD INTERFERENCE CIRCUIT
摘要 A circuit for preventing increase of a core voltage is provided to secure a stable operation and to implement a low power memory device, by reducing current consumption caused as an over-driving and a release operation are performed at the same time. An over driving signal delay part(120) generates a first enable signal in response to a number of bank signals, and generates a second enable signal by delaying the first enable signal, and generates a third enable signal in response to the second enable signal. An enable signal generation part(140) generates a release stop signal in response to the first and second enable signals, and generates a release enable signal in response to the release stop signal and the third enable signal. A voltage comparison part generates a driving signal by comparing a core voltage with a reference voltage in response to the release enable signal. A switching part(170,180) controls the core voltage in response to the driving signal and the release enable signal.
申请公布号 KR20070010301(A) 申请公布日期 2007.01.24
申请号 KR20050064777 申请日期 2005.07.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, YOUNG KYOUNG
分类号 G11C11/4074 主分类号 G11C11/4074
代理机构 代理人
主权项
地址