SPIN BARRIER ENHANCED MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY USING THE SAME,申请号EP20050752255-传众专利搜索

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发明名称	SPIN BARRIER ENHANCED MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY USING THE SAME
摘要
申请公布号	EP1745488(A2)	申请公布日期	2007.01.24
申请号	EP20050752255	申请日期	2005.05.11
申请人	GRANDIS, INC.	发明人	THIERRY, VALET
分类号	G11C11/16;G11C11/00	主分类号	G11C11/16
代理机构		代理人
主权项
地址

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