发明名称 Enhanced sputter target alloy compositions
摘要 <p>A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X 1 , where X 1 is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X 2 , wherein X 2 is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).</p>
申请公布号 EP1746586(A1) 申请公布日期 2007.01.24
申请号 EP20050256314 申请日期 2005.10.11
申请人 HERAEUS, INC. 发明人 ZIANI, ABDELOUAHAB;CHENG, YUANDA R.;KUNKEL, BERND;BARTHOLOMEUSZ, MICHAEL
分类号 G11B5/851;C23C14/00;C23C14/14;C23C14/34;G11B5/64;G11B5/65 主分类号 G11B5/851
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