| 摘要 |
A high power wavelength conversion semiconductor laser is provided to improve efficiency of wavelength conversion without an external optical system by forming a resonant region of multi-layer structure with respect to a second wavelength beam with a DBR mirror and a wavelength conversion material on an optical emitting cross section. A semiconductor laser has an active layer(23) formed between first and second clad layers, and generates a first wavelength beam. A resonant region has a first DBR mirror(37), a wavelength conversion material layer, and a second DBR mirror(39) which are sequentially formed on an optical emission cross section of the semiconductor laser. The high reflective mirror(26) is formed on a plane opposite to the optical emission cross section of the semiconductor laser. The wavelength conversion material layer converts the first wavelength beam into the second wavelength beam. The first and second DBR layers have at lest two layers which are stacked alternatively and have different refractive indexes. The first DBR mirror(37) has anti-reflectivity with respect to the first wavelength beam, and has high reflectivity with respect to the second wavelength beam. The second DBR mirror(39) defines a resonant region for the second wavelength beam with the first DBR mirror(37). The second DBR mirror(39) has a lower reflectivity than the first DBR mirror(37) with respect to the second wavelength beam so that the second wavelength beam is outputted from the resonant region. |
