| 摘要 |
A method for manufacturing a semiconductor device having a direct contact pad is provided to improve an operational characteristic of the semiconductor device by forming the direct contact pad and a bit line using the same material. A device isolation film(101) is formed on a predetermined region of a semiconductor substrate, such that an active region(103) is defined. Insulated gate patterns(117) are formed to cross the active region. A buried contact pad(121) and a passivation pad are formed on the semiconductor substrate between the gate patterns. A bit line insulation film(125) is formed on the substrate, which includes the buried contact pad and the passivation pad. The bit line insulation film and the passivation pad are patterned, such that the active region is exposed. A direct contact pad(129) and a bit line(131), which is contacted with the direct contact pad, are formed on an exposed active region.
|
