发明名称 Method of dry cleaning photoresist strips after via contact etching
摘要 Semiconductor manufacturing processes that reduce production costs as well as increase throughput by substituting the PR strip and ACT wet cleaning procedure after the via contact etching of a semiconductor with dry cleaning to be performed while removing a photoresist in a conventional PR strip apparatus. In addition, the methods can shorten waiting time and maintain consistency in the process by performing the PR strip and cleaning at the same time in the same chamber. The resultant devices have lower via contact resistance and its deviation, as compared to the conventional PR strip and ACT wet cleaning.
申请公布号 US7166534(B2) 申请公布日期 2007.01.23
申请号 US20020253384 申请日期 2002.09.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG TAE-WOO
分类号 H01L21/28;H01L21/302;G03F7/42;H01L21/3065;H01L21/311;H01L21/768 主分类号 H01L21/28
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