发明名称 Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
摘要 A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.
申请公布号 US7166544(B2) 申请公布日期 2007.01.23
申请号 US20040931609 申请日期 2004.09.01
申请人 发明人
分类号 H01L21/31 主分类号 H01L21/31
代理机构 代理人
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