发明名称 Integrated circuit amplifier device and method using FET tunneling gate current
摘要 An integrated circuit amplifier includes, in an exemplary embodiment, a first field effect transistor (FET) device configured as a common source amplifier with source degeneration and a second FET device configured as a tunneling gate FET, the tunneling gate FET coupled to the source follower. The tunneling gate FET is further configured so as to set a transconductance of the amplifier and the common source amplifier with source degeneration is configured so as to set an output conductance of the amplifier.
申请公布号 US7167053(B2) 申请公布日期 2007.01.23
申请号 US20040904238 申请日期 2004.10.29
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ABADEER WAGDI W.;BONACCIO ANTHONY R.;CHATTY KIRAN V.;FIFIELD JOHN A.
分类号 H03F3/16;H03F3/45;H03G3/12 主分类号 H03F3/16
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