| 摘要 |
There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layer 8 made of (Al<SUB>y</SUB>Ga<SUB>1-y</SUB>)<SUB>z</SUB>In<SUB>1-z</SUB>P (0<=y<=1, 0<z<1) disposed between an emitter layer 3 and a transparent substrate 2 which is transparent to emission wavelengths from the emitter layer 3.
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