发明名称 |
Gain-flattened wideband erbium-doped optical fiber amplifier |
摘要 |
A wideband erbium-doped optical fiber amplifier is disposed among an optical fiber through which a first and second band-band optical signals (for example, the C-band and L-band) are transmitted and forms a first optical path and a second optical path parallel to each other. The wideband erbium-doped optical fiber amplifier comprising a first amplifying section disposed on the first optical path, including a first erbium-doped optical fiber to amplify the first-band optical signals, a filter to gain-flatten the amplified first-band optical signals, wherein a reflected portion of the first band optical signal by the filter is directed to the second optical path; and a second amplifying section disposed on the second optical path, having a second erbium-doped optical fiber to amplify received second-band optical signals, wherein the reflected first-band optical signal is used to pump the second erbium-doped optical fiber.
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申请公布号 |
US7167302(B2) |
申请公布日期 |
2007.01.23 |
申请号 |
US20030674102 |
申请日期 |
2003.09.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-HUN;PARK SE-KANG;LEE HAK-PHIL;LEE KI-CHEOL;KIM JONG-KWON;DOH SANG-HYUN;LEE SANG-IL |
分类号 |
H01S3/00;H01S3/10;H01S3/067;H01S3/094;H01S3/23;H04B10/16;H04B10/17;H04J14/00;H04J14/02 |
主分类号 |
H01S3/00 |
代理机构 |
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