发明名称 |
Method for fabricating passivation layer |
摘要 |
A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.
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申请公布号 |
US7166542(B2) |
申请公布日期 |
2007.01.23 |
申请号 |
US20030707112 |
申请日期 |
2003.11.21 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LO MING-HUNG;CHOU LIANG-PIN;WANG CHUN-MING;CHEN LI-FU |
分类号 |
H01L21/31;H01L21/469;H01L21/4763;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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