发明名称 Semiconductor device
摘要 The present invention relates to a semiconductor device that is employed in a switching power supply for which a higher output is required, prevents noise from the coil, transformer, and so forth and implements a high efficiency power supply. By connecting a current mirror circuit including a p-type MOSFET, an overcurrent detection level tuning circuit, an overcurrent detection circuit, and an intermittent oscillation control circuit to an FB terminal peripheral circuit that is a feedback signal input terminal, PWM control capable of varying the IDRAIN peak value is implemented for the transition from a heavy load state to a light load state and intermittent oscillation control is implemented for the transition between a light load state to a loadless state, such that noise from the coil, transformer, and the like is suppressed and higher efficiency is realized.
申请公布号 US7167382(B2) 申请公布日期 2007.01.23
申请号 US20040895083 申请日期 2004.07.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HACHIYA YOSHIAKI
分类号 G05F1/66;H02M3/335;G05F3/26;H02M1/00;H02M3/155;H02M3/156 主分类号 G05F1/66
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