发明名称 |
Method of manufacturing a thin film transistor |
摘要 |
The present invention discloses a method of manufacturing a thin film transistor, including: preparing a substrate and a mixed solution, the mixed solution having a reductant and a first metal; forming a photoresist pattern on the substrate; etching a portion of the substrate to form a groove using the photoresist pattern as a mask; depositing a second metal on the substrate, a height of the second metal being smaller than a depth of the groove; removing the photoresist pattern on the substrate and the second metal on the photoresist other than in the groove; and forming the first metal on the second metal in the groove by submerging the substrate in the mixed solution.
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申请公布号 |
US7166502(B1) |
申请公布日期 |
2007.01.23 |
申请号 |
US20000709483 |
申请日期 |
2000.11.13 |
申请人 |
LG. PHILIPS LCD CO., LTD. |
发明人 |
KWON OH-NAM |
分类号 |
H01L21/00;H01L29/786;H01L21/288;H01L21/336;H01L21/4763;H01L21/77;H01L29/49 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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