发明名称 |
Nonvolatile semiconductor memory device containing reference capacitor circuit |
摘要 |
A plurality of dummy cells which generate reference potential corresponding to a capacitance of a bit line each have a floating gate, control gate and first and second diffusion layers. The first and second diffusion layers of each dummy cell are commonly connected by use of a wiring.
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申请公布号 |
US7167393(B2) |
申请公布日期 |
2007.01.23 |
申请号 |
US20040922906 |
申请日期 |
2004.08.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OIKAWA KIYOHARU;NISHIDA YUKIHIRO;KUBOTA MASAYA;MORITA JUNJI |
分类号 |
G11C16/00;G11C16/04;G11C16/06;G11C16/28;G11C17/00;G11C29/00;G11C29/04;H01L21/8247;H01L27/10;H01L27/115 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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