发明名称 |
Semiconductor storage device, redundancy circuit thereof, and portable electronic device |
摘要 |
A semiconductor storage device includes a plurality of memory elements and a redundancy circuit. Each of the memory elements includes a gate electrode provided on a semiconductor layer, a gate insulating film intervening between the gate electrode and the semiconductor layer, a channel region provided under the gate electrode, diffusion regions respectively provided at both sides of the channel region, the diffusion regions having a conductivity type which is opposite a conductivity type of the channel region, and memory functioning members respectively provided at both sides of the gate electrode, the memory functioning members having a function of holding charge. The redundancy circuit addresses a single chip memory including cells associated with a plurality of redundant lines and includes a decoder for selecting a redundant row. The semiconductor storage device can permanently inactivate further programming of the redundancy circuit in order to prevent a user from performing inadvertent programming.
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申请公布号 |
US7167402(B2) |
申请公布日期 |
2007.01.23 |
申请号 |
US20040848481 |
申请日期 |
2004.05.19 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YAOI YOSHIFUMI;IWATA HIROSHI;SHIBATA AKIHIDE;MORIKAWA YOSHINAO;NAWAKI MASARU |
分类号 |
G11C16/04;G11C29/00;G11C7/00;G11C11/34;G11C16/02;G11C16/06;G11C16/22;G11C29/04;H01L21/82;H01L21/8247;H01L27/10;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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