| 发明名称 |
Method for fabricating polycrystalline silicon liquid crystal display device |
| 摘要 |
A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
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| 申请公布号 |
US7166501(B2) |
申请公布日期 |
2007.01.23 |
| 申请号 |
US20040867814 |
申请日期 |
2004.06.16 |
| 申请人 |
LG.PHILIPS LCD CO., LTD. |
发明人 |
OH JAE-YOUNG;LEE KYOUNG-MOOK;NAM SEONG-HEE |
| 分类号 |
G02F1/136;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/146;H01L29/786 |
主分类号 |
G02F1/136 |
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