SEMICONDUCTOR DEVICE HAVING DECOUPLING CAPACITOR AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and its manufacturing method are provided to increase the effective area of a decoupling capacitor by using a channel trench of a cell region and a capacitor trench of a peripheral region. A cell region(CA), a first peripheral region(P1) and a second peripheral region(P2) are defined on a semiconductor substrate(5). At least one channel trench is arranged within the cell region of the substrate. First and second capacitor trenches are arranged within the first and the second peripheral regions, respectively. A gate electrode for filling the channel trench is formed on the substrate of the cell region. A first upper electrode is filled in the first capacitor trench. A second upper electrode is filled in the second capacitor trench. A gate dielectric film is interposed between the channel trench and the gate electrode. A first dielectric film is interposed between the substrate of the first peripheral region and the first upper electrode. A second dielectric film is interposed between the substrate of the second peripheral region and the second upper electrode.