METHOD FOR MANUFACTURING CMOS IMAGE SENSOR

摘要

A method for manufacturing an image sensor is provided to prevent ion damages on a photodiode and to improve photo sensitivity by using a photoresist blocking. A substrate(10) defined with an isolation region and an active region is prepared. A plurality of gate polys(14) are formed on the active region. A photodiode(13) is formed in the substrate of one side of the gate poly. A spacer(15a) is formed at both sidewalls of the gate poly. An oxide layer is formed on the resultant structure. The oxide layer is selectively removed by using a photoresist pattern for opening the photodiode. The spacer on the photodiode is removed.