HIGH BRIGHTNESS NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A high brightness nitride based semiconductor light emitting device is provided to maximize a light emissive area and to improve a current spread efficiency by using a TCO(Transparent Conducting Oxide) as a current spread layer. An N type nitride semiconductor layer is formed on a substrate. An active layer is formed on the N type nitride semiconductor layer. A P type nitride semiconductor layer is formed on the active layer. A P type electrode(150) is formed on the P type nitride semiconductor layer. A P type bonding metal(160) is formed on the P type electrode. A current spread layer(190) is formed on the N type nitride semiconductor layer. The current spread layer is made of a TCO. The TCO has lower sheet resistance and resistivity than those of an ITO(Indium Tin Oxide). An N type electrode(170) is formed on the current spread layer.