METHOD OF FABRICATING A FUSE OF SEMICONDUCTOR DEVICE

摘要

A method of forming a fuse of a semiconductor device is provided to acquire a vertical profile from the cross-section of each fuse pattern and to improve the uniformity of thickness between fuse patterns. Pre-fuse patterns are formed on a semiconductor substrate(10). An etch stop layer(30) is formed along an upper surface of the resultant structure. An upper insulating layer is formed on the resultant structure. A fuse window(45) is formed on the resultant structure by performing a first anisotropic etching process on the upper insulating layer until an upper surface of the etch stop layer is exposed to the outside. The etch stop layer is exposed to the outside by performing a wet etching process on the resultant upper insulating layer. A plurality of fuse patterns(27a') are formed by performing a second anisotropic etching process on the exposed etch stop layer and the pre-fuse patterns.